Samsung’s new smartphone Galaxy S8 is likely to be powered by Qualcomm’s next-generation Octa-Core Snapdragon 835 chipset. The new Galaxy S8 which is expected to make its debut at Mobile World Congress in 2017, could be the first smartphone to feature the new powerful octa-core processor.
According to a specification table revealed by the Chinese micro-blogging website Weibo, the leak suggests that Snapdragon 835 chip with model number MSM8998 will pack eight cores instead of four. The table also reveals that the new chip will feature a Kyro 200 CPU, an Adreno 540 GPU, UFS 2.1 support and Qualcomm’s top-end Snapdragon X16 modem with 1Gbps download speed. The entire package will be fabricated with Samsung’s 10nm FinFET technology.
Considering the fact that Samsung along with Qualcomm is building the new octa-core chip using the highly efficient 10nm FinFET process, the company’s new flagship smartphone Galaxy S8 has a high probability of carrying this powerful chip.
Jong Shik Yoon, the head of Samsung’s chip making business earlier last week said that,”We are pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using our 10nm FinFET technology. This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process.”
Samsung which had jointly announced the new Snapdragon 835 chip along with Qualcomm last week, claimed that the Snapdragon 835 with 10nm application processor will offer a 30 percent increase in area efficiency, boost the performance up to 27 percent and make a reduction of 40 percent in power consumption.
Another report from ET news says that the new chip which will be built with a 10nm processor, will be used in half of the Galaxy S8 devices while the other half will be using the Exynos 8895 SoC.
With numerous leaks and rumors surfacing online, the Samsung followers will still have to wait until February next year to get the full specs detail of the new Galaxy S8 smartphone.