Qualcomm along with Samsung has jointly announced the next-generation System on a Chip(SoC) Snapdragon 835 which will be built on Samsung’s 10nm FinFET process.
Unveiling the industry’s first 10nm application processor back in October, Samsung Electronics has now confirmed that it is manufacturing Qualcomm’s next Snapdragon processor. The two companies have jointly announced about this collaboration at a press event in New York.
Promising improved performance and energy efficiency to the Qualcomm’s next generation processor as compared to the company’s existing 14nm FinFET node which is used in the Snapdragon 820 and 821, Samsung claims that the 10nm will provide a 30 percent increase in area efficiency,(space) boost the performance up to 27 percent and will make a 40 percent reduction in power consumption.
Keith Kressin, the senior vice president from product management, Qualcomm Technologies said, “Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”
Samsung’s agonizing scenario with the Galaxy Note 7 devices did had an effect on its shares globally but the company’s semiconductor division has opened a doorway to increase its profits.
And with the contribution towards manufacturing the new Qualcomm Snapdragon which will be featured in the upcoming flagship Android smartphones, this development might be able to bring a more efficient mobile hardware for the new smartphones.